SiO₂ Substrate -- Transfer Service

Customizable to a maximum size of 4 inches, with graphene integrity > 95%, cleanliness > 90%, and surface resistance of 350 ~ 500 Ω/sq. The mobility of Hall devices assembled from this graphene exceeds 8000 cm²/V·s, making it suitable for applications in power devices, optoelectronic devices, and other fields.